{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302393","patent":{"patent_number":"US-11302393","title":"Techniques for programming a memory cell","assignee":null,"inventors":[],"filing_date":"2020-09-17T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Techniques are provided for programming a self-selecting memory cell that stores a first logic state. To program the memory cell, a pulse having a first polarity may be applied to the cell, which may result in the memory cell having a reduced threshold voltage. During a duration in which the threshold voltage of the memory cell may be reduced (e.g., during a selection time), a second pulse having a second polarity (e.g., a different polarity) may be applied to the memory cell. Applying the second pulse to the memory cell may result in the memory cell storing a second logic state different than the first logic state."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Techniques for programming a memory cell","description":"Techniques are provided for programming a self-selecting memory cell that stores a first logic state. To program the memory cell, a pulse having a first polarity may be applied to the cell, which may ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302393","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302393","citation_suggestion":"Patentable. \"Techniques for programming a memory cell\" (US-11302393). https://patentable.app/patents/US-11302393","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302393","json":"https://patentable.app/api/llm-context/US-11302393","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:59:17.891Z"}