{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302530","patent":{"patent_number":"US-11302530","title":"Zincblende structure group III-nitride","assignee":null,"inventors":[],"filing_date":"2018-03-29T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C—SiC layer on a silicon substrate. A nucleation layer is formed, recrystallized and then the zincblende structure group III-nitride layer is formed by MOVPE at temperature T3 in the range 750-1000° C., to a thickness of at least 0.5 μm. There is also disclosed a corresponding semiconductor structure comprising a zincblende structure group III-nitride layer which, when characterized by XRD, shows that the substantial majority, or all, of the layer is formed of zincblende structure group III-nitride in preference to wurtzite structure group III-nitride."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Zincblende structure group III-nitride","description":"A method is disclosed of manufacturing a semiconductor structure comprising an (001) oriented zincblende structure group III-nitride layer, such as GaN. The layer is formed on a 3C—SiC layer on a sili","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302530","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302530","citation_suggestion":"Patentable. \"Zincblende structure group III-nitride\" (US-11302530). https://patentable.app/patents/US-11302530","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302530","json":"https://patentable.app/api/llm-context/US-11302530","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:38:26.898Z"}