{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302532","patent":{"patent_number":"US-11302532","title":"Self-aligned double patterning with spacer-merge region","assignee":null,"inventors":[],"filing_date":"2020-03-02T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of forming a semiconductor structure includes forming a dielectric layer, forming a plurality of mandrel lines over the dielectric layer, and forming a plurality of non-mandrel lines over the dielectric layer between adjacent ones of the mandrel lines utilizing self-aligned double patterning. The method also includes forming at least one spacer-merge region extending from a first portion of a first one of the mandrel lines to a second portion of a second one of the mandrel lines in a first direction and covering at least a portion of one or more of the non-mandrel lines between the first mandrel and the second mandrel in a second direction orthogonal to the first direction. The method further includes forming a plurality of trenches in the dielectric layer by transferring a pattern of (i) the mandrel lines and (ii) portions of the non-mandrel lines outside the at least one spacer-merge region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned double patterning with spacer-merge region","description":"A method of forming a semiconductor structure includes forming a dielectric layer, forming a plurality of mandrel lines over the dielectric layer, and forming a plurality of non-mandrel lines over the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302532","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302532","citation_suggestion":"Patentable. \"Self-aligned double patterning with spacer-merge region\" (US-11302532). https://patentable.app/patents/US-11302532","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302532","json":"https://patentable.app/api/llm-context/US-11302532","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:36:00.373Z"}