{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302534","patent":{"patent_number":"US-11302534","title":"Semiconductor structure with gate dielectric layer and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2017-12-28T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor structure and a fabrication method are provided. The fabrication method includes forming a first dielectric layer on a base substrate, the first dielectric layer containing an opening exposing a surface portion of the base substrate; forming an initial gate dielectric layer on the surface portion of the base substrate and on a sidewall surface of the opening in the first dielectric layer; forming a gate dielectric layer by removing a portion of the initial gate dielectric layer from the sidewall surface of the opening, such that a top surface of the gate dielectric layer on the sidewall surface is lower than a top surface of the first dielectric layer; forming a gate electrode on the gate dielectric layer to fill the opening, a portion of the gate electrode being formed on a portion of the sidewall surface of the first dielectric layer; and forming a second dielectric layer on the gate electrode and on the first dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with gate dielectric layer and fabrication method thereof","description":"A semiconductor structure and a fabrication method are provided. The fabrication method includes forming a first dielectric layer on a base substrate, the first dielectric layer containing an opening ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302534","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302534","citation_suggestion":"Patentable. \"Semiconductor structure with gate dielectric layer and fabrication method thereof\" (US-11302534). https://patentable.app/patents/US-11302534","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302534","json":"https://patentable.app/api/llm-context/US-11302534","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:17:07.772Z"}