{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302568","patent":{"patent_number":"US-11302568","title":"Trench shield isolation layer","assignee":null,"inventors":[],"filing_date":"2019-08-21T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semiconductor material. A shield is disposed in the trench. The shield has a contact portion which extends toward a top surface of the trench. A gate of the MOS transistor is disposed in the trench over the shield. The gate is electrically isolated from the shield. The gate is electrically isolated from the contact portion of the shield by a shield isolation layer which covers an angled surface of the contact portion extending toward the top of the trench. Methods of forming the semiconductor device are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench shield isolation layer","description":"A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302568","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302568","citation_suggestion":"Patentable. \"Trench shield isolation layer\" (US-11302568). https://patentable.app/patents/US-11302568","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302568","json":"https://patentable.app/api/llm-context/US-11302568","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T00:37:03.886Z"}