{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302571","patent":{"patent_number":"US-11302571","title":"Cut integration for subtractive first metal line with bottom up second metal line","assignee":null,"inventors":[],"filing_date":"2019-10-10T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes applying a first metallic layer having a first metallic material onto a substrate of a semiconductor component. The method further includes removing portions of the first metallic layer to form a first metallic line. The method further includes creating an opening in the first metallic line. The method also includes depositing a dielectric material on the substrate. The method further includes forming at least one trench in the dielectric material. The method also includes depositing a second metallic material within the at least one trench to form a second metallic line. At least the first and second metallic lines and the dielectric material form an interconnect structure of the semiconductor component."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cut integration for subtractive first metal line with bottom up second metal line","description":"A method includes applying a first metallic layer having a first metallic material onto a substrate of a semiconductor component. The method further includes removing portions of the first metallic la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302571","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302571","citation_suggestion":"Patentable. \"Cut integration for subtractive first metal line with bottom up second metal line\" (US-11302571). https://patentable.app/patents/US-11302571","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302571","json":"https://patentable.app/api/llm-context/US-11302571","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:36:26.435Z"}