{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302583","patent":{"patent_number":"US-11302583","title":"Solid-phase source doping method for FinFET structure","assignee":null,"inventors":[],"filing_date":"2020-08-27T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"The a solid-state source doping method for a FinFET device includes: patterning a substrate to have the first structure and the second structure for PMOS and NMOS respectively; depositing a BSG layer and removing part of it on the first structure; depositing a PSG layer on the BSG layer over the second structure, the first structure and the substrate; removing the PSG layer on the second structure; forming a dielectric layer on the PSG and BSG layers; removing the PSG and BSG layers above the dielectric layer; removing the dielectric layer to expose the PSG and BSG layer; depositing a cap layer; annealing to diffuse laterally the phosphorus in the PSG layer and the boron in the BSG layer on the sidewalls into the fin structures; removing the cap layer, depositing an oxide layer and removing the hard mask layer and the buffer layer to expose the fin structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Solid-phase source doping method for FinFET structure","description":"The a solid-state source doping method for a FinFET device includes: patterning a substrate to have the first structure and the second structure for PMOS and NMOS respectively; depositing a BSG layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302583","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302583","citation_suggestion":"Patentable. \"Solid-phase source doping method for FinFET structure\" (US-11302583). https://patentable.app/patents/US-11302583","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302583","json":"https://patentable.app/api/llm-context/US-11302583","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T22:31:07.606Z"}