{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302585","patent":{"patent_number":"US-11302585","title":"Methods of manufacturing semiconductor devices by etching active fins using etching masks","assignee":null,"inventors":[],"filing_date":"2020-03-06T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["G06F","G06F","G06F","H01L","H01L","H01L","G06F","G06F"],"num_claims":12,"abstract":"In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fin, the first active fin, and the third active fin are disposed in this order in a second direction crossing the first direction. The second active fin is removed using a first etching mask covering the first and third active fins. The third active fin is removed using a second etching mask covering the first active fin and a portion of the substrate from which the second active fin is removed. A first gate structure is formed on the first active fin. A first source/drain layer is formed on a portion of the first active fin adjacent the first gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of manufacturing semiconductor devices by etching active fins using etching masks","description":"In a method of manufacturing a semiconductor device, first to third active fins are formed on a substrate. Each of the first to third active fins extends in a first direction, and the second active fi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302585","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302585","citation_suggestion":"Patentable. \"Methods of manufacturing semiconductor devices by etching active fins using etching masks\" (US-11302585). https://patentable.app/patents/US-11302585","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302585","json":"https://patentable.app/api/llm-context/US-11302585","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:23.686Z"}