{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302609","patent":{"patent_number":"US-11302609","title":"Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same","assignee":null,"inventors":[],"filing_date":"2020-08-31T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Radio frequency (RF) power dies having flip-chip architectures are disclosed, as are power amplifier modules (PAMs) containing such RF power dies. Embodiment of the PAM include a module substrate and an RF power die, which is mounted to a surface of the module substrate in an inverted orientation. The RF power die includes, in turn, a die body having a frontside and an opposing backside, a transistor having active regions formed in the die body, and a frontside layer system formed over the die body frontside. The frontside layer system contains patterned metal layers defining first, second, and third branched electrode structures, which are electrically coupled to the active regions of the transistor. A frontside input/output interface is formed in an outer terminal portion of the frontside layer system and contains first, second, and third bond pads electrically coupled to the first, second, and third branched electrode structures, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same","description":"Radio frequency (RF) power dies having flip-chip architectures are disclosed, as are power amplifier modules (PAMs) containing such RF power dies. Embodiment of the PAM include a module substrate and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302609","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302609","citation_suggestion":"Patentable. \"Radio frequency power dies having flip-chip architectures and power amplifier modules containing the same\" (US-11302609). https://patentable.app/patents/US-11302609","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302609","json":"https://patentable.app/api/llm-context/US-11302609","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:15:45.071Z"}