{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302690","patent":{"patent_number":"US-11302690","title":"Nitride semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-05-20T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"The present invention provides a nitride semiconductor device capable of forming a half-bridge circuit and suppressing changes in current collapse characteristics.A first transistor of the present invention includes a first nitride semiconductor layer, and a first gate electrode, a first source electrode and a first drain electrode formed thereon. The second transistor includes a second nitride semiconductor layer, and a second gate electrode, a second source electrode and a second drain electrode formed thereon. The source electrode is electrically connected to a lower region of a first region on the substrate, the second source electrode is electrically connected to a lower region of a second region on the substrate, and a first insulating region is disposed between a portion corresponding to the first region on the substrate and a portion corresponding to the second region on the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor device","description":"The present invention provides a nitride semiconductor device capable of forming a half-bridge circuit and suppressing changes in current collapse characteristics.A first transistor of the present inv","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302690","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302690","citation_suggestion":"Patentable. \"Nitride semiconductor device\" (US-11302690). https://patentable.app/patents/US-11302690","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302690","json":"https://patentable.app/api/llm-context/US-11302690","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:16:37.154Z"}