{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302695","patent":{"patent_number":"US-11302695","title":"Method for forming integrated semiconductor device with 2D material layer","assignee":null,"inventors":[],"filing_date":"2020-07-27T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H04L","H04L","H04L"],"num_claims":20,"abstract":"In a method for forming an integrated semiconductor device, a first transistor over is formed on a substrate; an inter-layer dielectric (ILD) layer is deposited over the first transistor; a gate conductive layer is deposited over the ILD layer; a gate dielectric layer is deposited over the gate conductive layer; the gate dielectric layer and the gate conductive layer are etched to form a gate stack; and a 2D material layer that has a first portion extending along a top surface and sidewalls of the gate stack and a second portion extending along a top surface of the ILD layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming integrated semiconductor device with 2D material layer","description":"In a method for forming an integrated semiconductor device, a first transistor over is formed on a substrate; an inter-layer dielectric (ILD) layer is deposited over the first transistor; a gate condu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302695","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302695","citation_suggestion":"Patentable. \"Method for forming integrated semiconductor device with 2D material layer\" (US-11302695). https://patentable.app/patents/US-11302695","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302695","json":"https://patentable.app/api/llm-context/US-11302695","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:55:52.431Z"}