{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302707","patent":{"patent_number":"US-11302707","title":"Integrated assemblies comprising conductive levels having two different metal-containing structures laterally adjacent one another, and methods of forming integrated assemblies","assignee":null,"inventors":[],"filing_date":"2019-09-27T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":32,"abstract":"Some embodiments include a memory device having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include first regions, and include second regions laterally adjacent to the first regions. The first regions have a first vertical thickness and at least two different metal-containing materials along the first vertical thickness. The second regions have a second vertical thickness at least as large as the first vertical thickness, and have only a single metal-containing material along the second vertical thickness. Dielectric-barrier material is laterally adjacent to the first regions. Charge-blocking material is laterally adjacent to the dielectric-barrier material. Charge-storage material is laterally adjacent to the charge-blocking material. Dielectric material is laterally adjacent to the charge storage material. Channel material is laterally adjacent to the dielectric material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated assemblies comprising conductive levels having two different metal-containing structures laterally adjacent one another, and methods of forming integrated assemblies","description":"Some embodiments include a memory device having a vertical stack of alternating insulative levels and conductive levels. The conductive levels include first regions, and include second regions lateral","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302707","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302707","citation_suggestion":"Patentable. \"Integrated assemblies comprising conductive levels having two different metal-containing structures laterally adjacent one another, and methods of forming integrated assemblies\" (US-11302707). https://patentable.app/patents/US-11302707","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302707","json":"https://patentable.app/api/llm-context/US-11302707","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:11:12.605Z"}