{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302713","patent":{"patent_number":"US-11302713","title":"Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same","assignee":null,"inventors":[],"filing_date":"2020-06-25T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A stack including a silicon oxide layer, a germanium-containing layer, and a III-V compound semiconductor layer is formed over a substrate. An alternating stack of insulating layers and spacer material layers is formed over the III-V compound semiconductor layer. The spacer material layers are formed as, or are subsequently replaced with, electrically conductive layers. Memory openings are formed through the alternating stack and into the III-V compound semiconductor layer. Memory opening fill structures including a memory film and a vertical semiconductor channel are formed in the memory openings. The vertical semiconductor channels can include a III-V compound semiconductor channel material that is electrically connected to the III-V compound semiconductor layer. The substrate and at least a portion of the silicon oxide layer can be subsequently detached."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same","description":"A stack including a silicon oxide layer, a germanium-containing layer, and a III-V compound semiconductor layer is formed over a substrate. An alternating stack of insulating layers and spacer materia","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302713","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302713","citation_suggestion":"Patentable. \"Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the same\" (US-11302713). https://patentable.app/patents/US-11302713","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302713","json":"https://patentable.app/api/llm-context/US-11302713","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:43:16.245Z"}