{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302715","patent":{"patent_number":"US-11302715","title":"Three-dimensional memory devices and fabrication methods thereof","assignee":null,"inventors":[],"filing_date":"2020-11-21T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Embodiments of three-dimensional (3D) memory devices having a memory layer that confines electron transportation and methods for forming the same are disclosed. The 3D memory device can include a structure of a plurality of gate electrodes insulated by a sealing structure over a substrate. The sealing structure can include an airgap between adjacent gate electrodes along a direction perpendicular to a top surface of the substrate. The 3D memory device can also include a semiconductor channel extending from a top surface of the structure to the substrate. The semiconductor channel can include a memory layer that has two portions extending along different directions. The 3D memory device can further include a source structure extending from the top surface of the structure to the substrate and between adjacent gate electrodes along a direction parallel to the top surface the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory devices and fabrication methods thereof","description":"Embodiments of three-dimensional (3D) memory devices having a memory layer that confines electron transportation and methods for forming the same are disclosed. The 3D memory device can include a stru","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302715","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302715","citation_suggestion":"Patentable. \"Three-dimensional memory devices and fabrication methods thereof\" (US-11302715). https://patentable.app/patents/US-11302715","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302715","json":"https://patentable.app/api/llm-context/US-11302715","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:26:10.550Z"}