{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302716","patent":{"patent_number":"US-11302716","title":"Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same","assignee":null,"inventors":[],"filing_date":"2020-05-18T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":13,"abstract":"A memory opening or a line trench is formed through an alternating stack of insulating layers and sacrificial material layers. A memory opening fill structure or a memory stack assembly is formed, which includes a vertical stack of discrete intermediate metallic electrodes formed on sidewalls of the sacrificial material layers, a gate dielectric layer, and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers, and a combination of a ferroelectric dielectric layer and an electrically conductive layer within each of the backside recesses. The electrically conductive layer is laterally spaced from a respective one of the discrete intermediate metallic electrodes by the ferroelectric dielectric layer. Ferroelectric-metal-insulator memory elements are formed around the vertical semiconductor channel."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same","description":"A memory opening or a line trench is formed through an alternating stack of insulating layers and sacrificial material layers. A memory opening fill structure or a memory stack assembly is formed, whi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302716","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302716","citation_suggestion":"Patentable. \"Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same\" (US-11302716). https://patentable.app/patents/US-11302716","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302716","json":"https://patentable.app/api/llm-context/US-11302716","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:41:37.877Z"}