{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302791","patent":{"patent_number":"US-11302791","title":"Semiconductor device including a fin-type transistor and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-04-21T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":14,"abstract":"In order to improve the reliability of a semiconductor device, in a memory cell of a split-gate type MONOS memory formed on a fin, a drain region is formed in an epitaxial layer on the fin, and a source region is formed in the fin, and a silicide layer is formed on an upper surface of the fin in which the source region is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device including a fin-type transistor and method of manufacturing the same","description":"In order to improve the reliability of a semiconductor device, in a memory cell of a split-gate type MONOS memory formed on a fin, a drain region is formed in an epitaxial layer on the fin, and a sour","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302791","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302791","citation_suggestion":"Patentable. \"Semiconductor device including a fin-type transistor and method of manufacturing the same\" (US-11302791). https://patentable.app/patents/US-11302791","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302791","json":"https://patentable.app/api/llm-context/US-11302791","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:08:22.122Z"}