{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302796","patent":{"patent_number":"US-11302796","title":"Method of forming self-aligned source/drain metal contacts","assignee":null,"inventors":[],"filing_date":"2020-04-01T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a method of semiconductor fabrication. The method includes forming a fin protruding from a substrate, the fin having a first sidewall and a second sidewall opposing the first sidewall; forming a sacrificial dielectric layer on the first and second sidewalls and a top surface of the fin; etching the sacrificial dielectric layer to remove the sacrificial dielectric layer from the second sidewall of the fin; forming a recess in the fin; growing an epitaxial source/drain (S/D) feature from the recess, the epitaxial S/D feature having a first sidewall and a second sidewall opposing the first sidewall, wherein the sacrificial dielectric layer covers the first sidewall of the epitaxial S/D feature; recessing the sacrificial dielectric layer, thereby exposing the first sidewall of the epitaxial S/D feature; and forming an S/D contact on the first sidewall of the epitaxial S/D feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming self-aligned source/drain metal contacts","description":"The present disclosure provides a method of semiconductor fabrication. The method includes forming a fin protruding from a substrate, the fin having a first sidewall and a second sidewall opposing the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302796","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302796","citation_suggestion":"Patentable. \"Method of forming self-aligned source/drain metal contacts\" (US-11302796). https://patentable.app/patents/US-11302796","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302796","json":"https://patentable.app/api/llm-context/US-11302796","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:45:01.462Z"}