{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302809","patent":{"patent_number":"US-11302809","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-09-03T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a first-type deep well with a first impurity of a first conductivity type in a semiconductor substrate; doping a second impurity of a second conductivity type into the first-type deep well to form a second-type doped region, in which a concentration of the first impurity in the first-type deep well is greater than a concentration of the second impurity in the second-type doped region and less than about ten times the concentration of the second impurity in the second-type doped region; forming a field oxide partially embedded in the semiconductor substrate, the field oxide laterally extending from a first side of the second-type doped region; forming a second-type well of the second conductivity type in the first-type deep well and on a second side of the second-type doped region opposite the first side of the second-type doped region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A method includes forming a first-type deep well with a first impurity of a first conductivity type in a semiconductor substrate; doping a second impurity of a second conductivity type into the first-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302809","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302809","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-11302809). https://patentable.app/patents/US-11302809","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302809","json":"https://patentable.app/api/llm-context/US-11302809","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T09:59:00.349Z"}