{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302813","patent":{"patent_number":"US-11302813","title":"Wrap around contact for nanosheet source drain epitaxy","assignee":null,"inventors":[],"filing_date":"2019-12-19T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["B82Y","H01L"],"num_claims":11,"abstract":"Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A nanosheet stack of alternating nanosheets of a sacrificial semiconductor material and a semiconductor channel material located on a substrate is provided. An additional dielectric spacer is formed on the dielectric spacer and within a gap. Dielectric spacer is removed. An epitaxial oxide layer is formed on the re-exposed recessed surfaces of the substrate. Germanium is formed on the epitaxial oxide layer. Sidewalls of each semiconductor channel material nanosheet are physically exposed. A source/drain is formed on a surface of the germanium. ILD material is formed above each source/drain and above an adjacent region. Portions of ILD material are removed such that sidewalls of the source/drain and germanium are exposed. The germanium is removed. A contact region is formed that wraps around the source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Wrap around contact for nanosheet source drain epitaxy","description":"Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A nanosheet stack of alternating nanosheets of a sacrificial semiconductor material an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302813","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302813","citation_suggestion":"Patentable. \"Wrap around contact for nanosheet source drain epitaxy\" (US-11302813). https://patentable.app/patents/US-11302813","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302813","json":"https://patentable.app/api/llm-context/US-11302813","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:08:26.621Z"}