{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11302820","patent":{"patent_number":"US-11302820","title":"Localized protection layer for laser annealing process","assignee":null,"inventors":[],"filing_date":"2019-09-27T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","B82Y"],"num_claims":20,"abstract":"A method of forming a semiconductor device includes forming source/drain contact openings extending through at least one dielectric layer to expose source/drain contact regions of source/drain structures. The method further includes depositing a light blocking layer along sidewalls and bottom surfaces of the source/drain contact openings and a topmost surface of the at least one dielectric layer. The method further includes performing a laser annealing process to activate dopants in the source/drain contact region. The method further includes forming source/drain contact structures within source/drain contact openings."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Localized protection layer for laser annealing process","description":"A method of forming a semiconductor device includes forming source/drain contact openings extending through at least one dielectric layer to expose source/drain contact regions of source/drain structu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11302820","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11302820","citation_suggestion":"Patentable. \"Localized protection layer for laser annealing process\" (US-11302820). https://patentable.app/patents/US-11302820","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11302820","json":"https://patentable.app/api/llm-context/US-11302820","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T07:36:51.568Z"}