{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11307799","patent":{"patent_number":"US-11307799","title":"Managing threshold voltage drift based on operating characteristics of a memory sub-system","assignee":null,"inventors":[],"filing_date":"2019-08-27T00:00:00.000Z","publication_date":"2022-04-19T00:00:00.000Z","cpc_codes":["G06F","G11C","G06F","G06F","G06F","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"Multiple sets of values corresponding to operating characteristics of a memory sub-system are established. For each of the sets of values, a read voltage level corresponding to a decreased bit error rate of a programming distribution of the memory sub-system is identified. A data structure is stored that includes the read voltage level for each set of values corresponding to the operating characteristics. In response to a read command, a current set of values of the operating characteristics is determined. Using the data structure, a stored read voltage level corresponding to the current set of values of the operating characteristics is identified. The read command is executed using the stored read voltage level corresponding to the current set of values of the operating characteristics."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Managing threshold voltage drift based on operating characteristics of a memory sub-system","description":"Multiple sets of values corresponding to operating characteristics of a memory sub-system are established. For each of the sets of values, a read voltage level corresponding to a decreased bit error r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11307799","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11307799","citation_suggestion":"Patentable. \"Managing threshold voltage drift based on operating characteristics of a memory sub-system\" (US-11307799). https://patentable.app/patents/US-11307799","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11307799","json":"https://patentable.app/api/llm-context/US-11307799","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T10:01:18.921Z"}