{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462403","patent":{"patent_number":"US-11462403","title":"Semiconductor structure and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2021-04-08T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"The present disclosure provides a semiconductor structure and a method for manufacturing the same. The method at least includes: applying a first wet etching to remove a Ti metal seed layer to expose a dielectric layer; performing a first pretreatment on the dielectric layer; forming a first groove in the dielectric layer to expose an interfacial Ti metal seed layer in the dielectric layer; applying a second wet etching to remove the interfacial Ti metal seed layer; and performing a second pretreatment on the dielectric layer to form a second groove with a depth greater than that of the interfacial Ti metal seed layer, which can effectively remove the interfacial Ti metal seed layer, and results in a depth difference between the bottom of the second groove and the interfacial Ti metal seed layer, thereby avoiding short circuits caused by the interfacial Ti metal seed layer, and improving device reliability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and method for manufacturing same","description":"The present disclosure provides a semiconductor structure and a method for manufacturing the same. The method at least includes: applying a first wet etching to remove a Ti metal seed layer to expose ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462403","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462403","citation_suggestion":"Patentable. \"Semiconductor structure and method for manufacturing same\" (US-11462403). https://patentable.app/patents/US-11462403","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462403","json":"https://patentable.app/api/llm-context/US-11462403","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:35:53.055Z"}