{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462409","patent":{"patent_number":"US-11462409","title":"Epitaxial silicon wafer, and method for manufacturing epitaxial silicon wafer","assignee":null,"inventors":[],"filing_date":"2017-08-07T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":2,"abstract":"An epitaxial silicon wafer includes: a silicon wafer doped with phosphorus as a dopant and having an electrical resistivity of less than 1.0 m Ω·cm; and an epitaxial film formed on the silicon wafer. The silicon wafer includes: a main surface to which a (100) plane is inclined; and a [100] axis that is perpendicular to the (100) plane and inclined at an angle ranging from 0°30′ to 0°55′ in any direction with respect to an axis perpendicular to the main surface. The epitaxial silicon wafer has at most 1/cm2 of a density of a hillock defect generated thereon."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial silicon wafer, and method for manufacturing epitaxial silicon wafer","description":"An epitaxial silicon wafer includes: a silicon wafer doped with phosphorus as a dopant and having an electrical resistivity of less than 1.0 m Ω·cm; and an epitaxial film formed on the silicon wafer. ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462409","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462409","citation_suggestion":"Patentable. \"Epitaxial silicon wafer, and method for manufacturing epitaxial silicon wafer\" (US-11462409). https://patentable.app/patents/US-11462409","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462409","json":"https://patentable.app/api/llm-context/US-11462409","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T02:40:48.562Z"}