{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462415","patent":{"patent_number":"US-11462415","title":"Methods for polishing dielectric layer in forming semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-01-29T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. For example, a stack structure is formed in a staircase region and a core array region. The stack structure includes a plurality of interleaved first material layers and second material layers. Edges of the interleaved first material layers and second material layers define a staircase structure on a side of the stack structure in the staircase region. A dielectric layer is formed over the staircase region and a peripheral region outside the stack structure. The dielectric layer includes a protrusion from the stack structure. The dielectric layer is polished using an auto-stop slurry to remove the protrusion of the dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for polishing dielectric layer in forming semiconductor device","description":"Methods for polishing dielectric layers using an auto-stop slurry in forming semiconductor devices, such as three-dimensional (3D) memory devices, are provided. For example, a stack structure is forme","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462415","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462415","citation_suggestion":"Patentable. \"Methods for polishing dielectric layer in forming semiconductor device\" (US-11462415). https://patentable.app/patents/US-11462415","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462415","json":"https://patentable.app/api/llm-context/US-11462415","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:59.836Z"}