{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462417","patent":{"patent_number":"US-11462417","title":"High pressure and high temperature anneal chamber","assignee":null,"inventors":[],"filing_date":"2020-04-15T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Disclosed herein is an apparatus and method for annealing semiconductor substrates. In one example a temperature-controlled fluid circuit includes a condenser configured to fluidly connect to an internal volume of a processing chamber. The processing chamber has a body, the internal volume is within the body. The condenser is configured to condense a processing fluid into liquid phase. A source conduit includes a first terminal end that couples to a first port on the body of the processing chamber. The source conduit includes a second terminal end. The first terminal end couples to a gas panel. The gas panel is configured to provide a processing fluid into the internal volume of the processing chamber. A gas conduit includes a first end. The first end couples to the condenser and a second end. The second end is configured to couple to a second port on the body of the processing chamber."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High pressure and high temperature anneal chamber","description":"Disclosed herein is an apparatus and method for annealing semiconductor substrates. In one example a temperature-controlled fluid circuit includes a condenser configured to fluidly connect to an inter","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462417","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462417","citation_suggestion":"Patentable. \"High pressure and high temperature anneal chamber\" (US-11462417). https://patentable.app/patents/US-11462417","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462417","json":"https://patentable.app/api/llm-context/US-11462417","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:15:54.050Z"}