{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462443","patent":{"patent_number":"US-11462443","title":"Self-aligned contacts for nanosheet field effect transistor devices","assignee":null,"inventors":[],"filing_date":"2020-12-03T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"In one aspect, a method of forming a semiconductor device, can comprise forming a first transistor structure and a second transistor structure separated by a trench. The first and the second transistor structures can comprise a plurality of stacked nanosheets forming a channel structure, and a source portion and a drain portion horizontally separated by the channel structure. A first and a second spacer can beformed in the trench at sidewalls of the transistor structures, both protruding above a top surface of the transistor structures. The method can comprise applying a first mask layer including an opening exposing the first spacer at a first source/drain portion of the first transistor structure and covering the second spacer, partially etching the exposed first spacer through the opening, exposing at least parts of a sidewall of the first source/drain portion of the first transistor structure, and removing the mask layer. The method can further comprise depositing a contact material over the transistor structures and the first and second spacer, filling the trench and contacting the first source/drain portion of the first transistor structure, and etching back the contact material layer below a top surface of the second spacer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-aligned contacts for nanosheet field effect transistor devices","description":"In one aspect, a method of forming a semiconductor device, can comprise forming a first transistor structure and a second transistor structure separated by a trench. The first and the second transisto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462443","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462443","citation_suggestion":"Patentable. \"Self-aligned contacts for nanosheet field effect transistor devices\" (US-11462443). https://patentable.app/patents/US-11462443","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462443","json":"https://patentable.app/api/llm-context/US-11462443","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:33:30.578Z"}