{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462470","patent":{"patent_number":"US-11462470","title":"Method of forming graphene and metallic cap and barrier layers for interconnects","assignee":null,"inventors":[],"filing_date":"2019-12-13T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer on a semiconductor substrate; etching the dielectric layer to form a via hole that exposes the conductive layer; depositing a barrier layer to line the via hole; after depositing the barrier layer, depositing a first metal layer to fill a remainder of the via hole; performing a chemical mechanical polishing (CMP) process on the first metal layer until the barrier layer is exposed; after performing the CMP process, depositing a second metal layer over the barrier layer and the first metal layer; and etching the second metal layer to form a metal line."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming graphene and metallic cap and barrier layers for interconnects","description":"A method for manufacturing a semiconductor structure includes: forming a dielectric layer over a conductive layer on a semiconductor substrate; etching the dielectric layer to form a via hole that exp","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462470","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462470","citation_suggestion":"Patentable. \"Method of forming graphene and metallic cap and barrier layers for interconnects\" (US-11462470). https://patentable.app/patents/US-11462470","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462470","json":"https://patentable.app/api/llm-context/US-11462470","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:30:08.322Z"}