{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462486","patent":{"patent_number":"US-11462486","title":"Semiconductor device and method for manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-02-21T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"A semiconductor device includes a first semiconductor layer having a first surface and a second surface. A first metal film is disposed on the first surface. An outer portion of the first surface beyond an outer periphery of the first metal film is left uncovered by the first metal film. A semiconductor substrate has an inner region of a first thickness and a peripheral region of a second thickness, greater than the first thickness. A portion of the first semiconductor layer is between the inner region and the first metal layer. The peripheral region of the semiconductor substrate is below the outer portion of the first surface of the first semiconductor layer. A second metal film is below the inner region of the semiconductor substrate and adjacent to the peripheral region of the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing semiconductor device","description":"A semiconductor device includes a first semiconductor layer having a first surface and a second surface. A first metal film is disposed on the first surface. An outer portion of the first surface beyo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462486","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462486","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing semiconductor device\" (US-11462486). https://patentable.app/patents/US-11462486","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462486","json":"https://patentable.app/api/llm-context/US-11462486","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:17:59.732Z"}