{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462503","patent":{"patent_number":"US-11462503","title":"Hybrid bonding using dummy bonding contacts","assignee":null,"inventors":[],"filing_date":"2020-10-06T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer including first interconnects is formed above a first substrate. A first bonding layer including first bonding contacts is formed above the first interconnect layer, such that each first interconnect is in contact with a respective first bonding contact. A second interconnect layer including second interconnects is formed above a second substrate. A second bonding layer including second bonding contacts is formed above the second interconnect layer, such that at least one second bonding contact is in contact with a respective second interconnect, and at least another second bonding contact is separated from the second interconnects. The first and second substrates are bonded in a face-to-face manner, such that each first bonding contact is in contact with one second bonding contact at a bonding interface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Hybrid bonding using dummy bonding contacts","description":"Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer includ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462503","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462503","citation_suggestion":"Patentable. \"Hybrid bonding using dummy bonding contacts\" (US-11462503). https://patentable.app/patents/US-11462503","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462503","json":"https://patentable.app/api/llm-context/US-11462503","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:15:15.890Z"}