{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462514","patent":{"patent_number":"US-11462514","title":"Memory device with a through hole structure, semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2021-02-22T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A memory device, a semiconductor device and their manufacturing methods are provided. The method may include: providing a first die and a plurality of second dies, the first die having a first pad, each of the plurality of second dies having a second pad, each of the second pads having a through hole; stacking the plurality of second dies on the first die with the second pads aligned with the first pad. In any two adjacent second dies, the through hole closer to the first die is not larger than the through hole farther away; forming a connecting hole passing through the through holes, exposing the first pad, and comprising a plurality of hole sections; and forming a conductive body in the connecting hole. This method simplifies the manufacturing process, reduces the cost thereof, and improves the production yield."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device with a through hole structure, semiconductor device and method for manufacturing the same","description":"A memory device, a semiconductor device and their manufacturing methods are provided. The method may include: providing a first die and a plurality of second dies, the first die having a first pad, ea","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462514","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462514","citation_suggestion":"Patentable. \"Memory device with a through hole structure, semiconductor device and method for manufacturing the same\" (US-11462514). https://patentable.app/patents/US-11462514","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462514","json":"https://patentable.app/api/llm-context/US-11462514","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T15:38:04.579Z"}