{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462534","patent":{"patent_number":"US-11462534","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2020-11-27T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A device comprises a first transistor disposed within a first device region of a substrate and a second transistor disposed within a second device region of the substrate. The first transistor comprises first source/drain regions, a first gate structure laterally between the first source/drain regions, and first gate spacers respectively on opposite sidewalls of the first gate structure. The second transistor comprises second source/drain regions, a second gate structure laterally between the second source/drain regions, and second gate spacers respectively on opposite sidewalls of the second gate structure. The second source/drain regions of the second transistor have a maximal width greater than a maximal width of the first source/drain regions of the first transistor, but the second gate spacers of the second transistor have a thickness less than a thickness of the first gate spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A device comprises a first transistor disposed within a first device region of a substrate and a second transistor disposed within a second device region of the substrate. The first transistor compris","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462534","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462534","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-11462534). https://patentable.app/patents/US-11462534","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462534","json":"https://patentable.app/api/llm-context/US-11462534","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:56:28.912Z"}