{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462560","patent":{"patent_number":"US-11462560","title":"Methods for forming three-dimensional memory devices","assignee":null,"inventors":[],"filing_date":"2020-06-26T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A sacrificial layer on a substrate, a P-type doped semiconductor layer having an N-well on the sacrificial layer, and a dielectric stack on the P-type doped semiconductor layer are subsequently formed. A channel structure extending vertically through the dielectric stack and the P-type doped semiconductor layer is formed. The dielectric stack is replaced with a memory stack, such that the channel structure extends vertically through the memory stack and the P-type doped semiconductor layer. The substrate and the sacrificial layer are removed to expose an end of the channel structure. Part of the channel structure abutting the P-type doped semiconductor layer is replaced with a semiconductor plug."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming three-dimensional memory devices","description":"Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A sacrificial layer on a substrate, a P-type doped","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462560","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462560","citation_suggestion":"Patentable. \"Methods for forming three-dimensional memory devices\" (US-11462560). https://patentable.app/patents/US-11462560","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462560","json":"https://patentable.app/api/llm-context/US-11462560","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:29:30.155Z"}