{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462614","patent":{"patent_number":"US-11462614","title":"Semiconductor devices and methods of manufacturing","assignee":null,"inventors":[],"filing_date":"2020-02-03T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","B82Y","B82Y","H01L","H01L"],"num_claims":20,"abstract":"Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and manufacturing methods thereof. Different thickness in an epi-growth scheme is adopted to create different sheet thicknesses within the same device channel regions for use in manufacturing vertically stacked nanostructure (e.g., nanosheet, nanowire, or the like) GAA devices. A vertically stacked nanostructure GAA device may be formed with a topmost channel region that is thinner than a bottommost channel region. Furthermore, the topmost channel region of the GAA device may be formed with lightly doped drain regions with a highest concentration and/or a greater degree of lateral diffusion of implanted dopants as compared to the bottommost channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods of manufacturing","description":"Semiconductor devices and their manufacturing methods are disclosed herein, and more particularly to semiconductor devices including a transistor having gate all around (GAA) transistor structures and","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462614","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462614","citation_suggestion":"Patentable. \"Semiconductor devices and methods of manufacturing\" (US-11462614). https://patentable.app/patents/US-11462614","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462614","json":"https://patentable.app/api/llm-context/US-11462614","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:46:50.459Z"}