{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11462625","patent":{"patent_number":"US-11462625","title":"Semiconductor device having fluorine in the interface regions between the gate electrode and the channel","assignee":null,"inventors":[],"filing_date":"2021-02-10T00:00:00.000Z","publication_date":"2022-10-04T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"The semiconductor device includes a well region disposed in a surface layer of a semiconductor substrate, a source region and a drain region arranged separated from each other in a surface layer of the well region, a channel region disposed between the source region and the drain region, and a gate electrode disposed on the channel region via a gate insulating film containing fluorine, in which concentration of fluorine existing in a first interface, the first interface being an interface of the gate insulating film with the gate electrode, and concentration of fluorine existing in a second interface, the second interface being an interface of the gate insulating film with the channel region, are higher than concentration of fluorine existing in a middle region in the depth direction of the gate insulating film, and fluorine concentration in the first interface is higher than fluorine concentration in the second interface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having fluorine in the interface regions between the gate electrode and the channel","description":"The semiconductor device includes a well region disposed in a surface layer of a semiconductor substrate, a source region and a drain region arranged separated from each other in a surface layer of th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11462625","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11462625","citation_suggestion":"Patentable. \"Semiconductor device having fluorine in the interface regions between the gate electrode and the channel\" (US-11462625). https://patentable.app/patents/US-11462625","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11462625","json":"https://patentable.app/api/llm-context/US-11462625","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:16:07.207Z"}