{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11467932","patent":{"patent_number":"US-11467932","title":"Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping","assignee":null,"inventors":[],"filing_date":"2020-05-04T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["G06F","G11C","G11C","G06F","G06F"],"num_claims":17,"abstract":"A nonvolatile memory device includes a first semiconductor layer, a second semiconductor layer and a control circuit. The memory cell array includes a first vertical structure on the first upper substrate and a second vertical structure on the second upper substrate, the first vertical structure includes first sub-blocks and the second vertical structure includes second sub-blocks. The second semiconductor layer includes a lower substrate that includes address decoders and page buffer circuits. The first vertical structure includes first via areas in which one or more through-hole vias are provided, through-hole vias pass through the first vertical structure. The first sub-blocks are arranged among the first via areas and the second sub-blocks are arranged among the second via areas. The control circuit groups the memory blocks into a plurality of groups based on whether the memory blocks is close to the first via areas and performs address re-mapping."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping","description":"A nonvolatile memory device includes a first semiconductor layer, a second semiconductor layer and a control circuit. The memory cell array includes a first vertical structure on the first upper subst","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11467932","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11467932","citation_suggestion":"Patentable. \"Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mapping\" (US-11467932). https://patentable.app/patents/US-11467932","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11467932","json":"https://patentable.app/api/llm-context/US-11467932","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:57:13.507Z"}