{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11468932","patent":{"patent_number":"US-11468932","title":"Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array","assignee":null,"inventors":[],"filing_date":"2019-06-20T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of memory cells connected to the plurality of lines and arranged in a matrix along an extending direction of the plurality of lines and along an arrangement direction of the plurality of lines, each of the plurality of memory cells including a magnetoresistance effect element; a selection circuit connected to the plurality of lines and configured to select non-adjacent lines that are not adjacent to one another, from the plurality of lines; and a controller connected to the selection circuit and configured to cause the selection circuit to select the non-adjacent lines and allow a write current to flow through the non-adjacent lines simultaneously in writing data on the memory cell array."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array","description":"A magnetic memory device includes: a memory cell array including a plurality of lines arranged parallel to one another at predetermined intervals and extending in one direction, and a plurality of mem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11468932","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11468932","citation_suggestion":"Patentable. \"Magnetic memory device with write current flowing simultaneously through non-adjacent lines in memory cell array\" (US-11468932). https://patentable.app/patents/US-11468932","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11468932","json":"https://patentable.app/api/llm-context/US-11468932","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:37:09.739Z"}