{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469101","patent":{"patent_number":"US-11469101","title":"Semiconductor structure and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2021-01-07T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Embodiments of the present application provide a semiconductor structure and a manufacturing method therefor. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buffer layer and a second buffer layer. By doping a transition metal in the first buffer layer, a deep level trap may be formed to capture background electrons, and diffusion of free electrons toward the substrate may also be avoided. By decreasing a doping concentration of the transition metal in the second buffer layer, a tailing effect is avoided and current collapse is prevented. By doping periodically the impurity in the buffer layer, the impurity may be as an acceptor impurity to compensate the background electrons, and then a concentration of the background electrons is reduced. By using the periodic doping method, dislocations, caused by doping, in the buffer layer may be effectively reduced."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method therefor","description":"Embodiments of the present application provide a semiconductor structure and a manufacturing method therefor. A buffer layer is disposed on a substrate layer, and the buffer layer includes a first buf","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469101","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469101","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method therefor\" (US-11469101). https://patentable.app/patents/US-11469101","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469101","json":"https://patentable.app/api/llm-context/US-11469101","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:25:41.011Z"}