{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469137","patent":{"patent_number":"US-11469137","title":"Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer","assignee":null,"inventors":[],"filing_date":"2020-12-16T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal material and a donor substrate including a thin layer of a semiconductor material, one or more layers of dielectric material being at a bonding interface thereof; transferring the thin layer onto the support substrate; and forming an electric charge trap region in the support substrate in contact with the one or more layers of the dielectric material present at the bonding interface, by transforming a buried zone of the support substrate into a polycrystal."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer","description":"A method for manufacturing a semiconductor-on-insulator type substrate for radiofrequency applications is provided, including the steps of: directly bonding a support substrate of a single crystal mat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469137","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469137","citation_suggestion":"Patentable. \"Manufacturing process of an RF-SOI trapping layer substrate resulting from a crystalline transformation of a buried layer\" (US-11469137). https://patentable.app/patents/US-11469137","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469137","json":"https://patentable.app/api/llm-context/US-11469137","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:20:13.700Z"}