{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469228","patent":{"patent_number":"US-11469228","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-01-12T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode ex","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469228","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469228","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11469228). https://patentable.app/patents/US-11469228","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469228","json":"https://patentable.app/api/llm-context/US-11469228","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:25:35.771Z"}