{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469234","patent":{"patent_number":"US-11469234","title":"Semiconductor device having reduced contact resistance between access transistors and conductive features and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2020-11-13T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":10,"abstract":"The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a storage capacitor, an access transistor, and at least one conductive feature for electrically coupling the storage capacitor to the access transistor. The substrate includes at least one isolation feature defining a plurality of active regions, wherein a plurality of impurity regions of the access transistor are in the active region. The storage capacitor is disposed over the substrate, and the conductive feature extends from the storage capacitor and into a portion of the substrate where one of the impurity regions is disposed. As a result, a contact area between the access transistor and the conductive feature is increased, and an operation speed of the compact semiconductor device is increased."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having reduced contact resistance between access transistors and conductive features and method of manufacturing the same","description":"The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a storage capacitor, an access transistor, and at least one conductive feature for electrically c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469234","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469234","citation_suggestion":"Patentable. \"Semiconductor device having reduced contact resistance between access transistors and conductive features and method of manufacturing the same\" (US-11469234). https://patentable.app/patents/US-11469234","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469234","json":"https://patentable.app/api/llm-context/US-11469234","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T06:22:50.317Z"}