{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469236","patent":{"patent_number":"US-11469236","title":"DRAM circuitry, and integrated circuitry","assignee":null,"inventors":[],"filing_date":"2020-01-02T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Integrated circuitry comprises a first conductive line buried within semiconductive material of a substrate. The first conductive line comprises conductively-doped semiconductor material directly above and directly against metal material in a vertical cross-section. A second conductive line is above the semiconductive material and is laterally-spaced from the first conductive line in the vertical cross-section. The second conductive line comprises metal material in the vertical cross-section. Insulative material is directly above the first and second conductive lines. A first conductive via extends through the insulative material and through the conductively-doped semiconductor material to the metal material of the first conductive line. A second conductive via extends through the insulative material to the metal material of the second conductive line. Other embodiments and aspects, including method, are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"DRAM circuitry, and integrated circuitry","description":"Integrated circuitry comprises a first conductive line buried within semiconductive material of a substrate. The first conductive line comprises conductively-doped semiconductor material directly abov","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469236","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469236","citation_suggestion":"Patentable. \"DRAM circuitry, and integrated circuitry\" (US-11469236). https://patentable.app/patents/US-11469236","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469236","json":"https://patentable.app/api/llm-context/US-11469236","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:23:55.284Z"}