{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469242","patent":{"patent_number":"US-11469242","title":"Semiconductor memory device and manufacturing method of the semiconductor memory device","assignee":null,"inventors":[],"filing_date":"2020-02-11T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"There is provided a semiconductor memory device including: a substrate having a Complementary Metal Oxide Semiconductor (CMOS) circuit; a gate stack structure including interlayer insulating layers and conductive patterns, which are alternately stacked in a vertical direction on the substrate; a channel structure having a first part penetrating the gate stack structure and a second part extending from one end of the first part, the second part extending beyond the gate stack structure; a common source line extending to overlap with the gate stack structure, the common source line surrounding the second part of the channel structure; a memory layer disposed between the first part of the channel structure and the gate stack structure; and a bit line connected to the other end of the first part of the channel structure, the bit line being disposed between the substrate and the gate stack structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and manufacturing method of the semiconductor memory device","description":"There is provided a semiconductor memory device including: a substrate having a Complementary Metal Oxide Semiconductor (CMOS) circuit; a gate stack structure including interlayer insulating layers an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469242","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469242","citation_suggestion":"Patentable. \"Semiconductor memory device and manufacturing method of the semiconductor memory device\" (US-11469242). https://patentable.app/patents/US-11469242","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469242","json":"https://patentable.app/api/llm-context/US-11469242","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:47:07.140Z"}