{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469267","patent":{"patent_number":"US-11469267","title":"SOT MRAM having dielectric interfacial layer and method forming same","assignee":null,"inventors":[],"filing_date":"2020-03-02T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer over the dielectric layer, depositing a tunnel barrier layer over the free layer, and depositing a reference layer over the tunnel barrier layer. The method further includes performing a first patterning process to pattern the plurality of layers, and performing a second patterning process to pattern the reference layer, the tunnel barrier layer, the free layer, and the dielectric layer. The second patterning process stops on a top surface of the spin orbit coupling layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"SOT MRAM having dielectric interfacial layer and method forming same","description":"A method includes depositing a plurality of layers, which includes depositing a spin orbit coupling layer, depositing a dielectric layer over the spin orbit coupling layer, depositing a free layer ove","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469267","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469267","citation_suggestion":"Patentable. \"SOT MRAM having dielectric interfacial layer and method forming same\" (US-11469267). https://patentable.app/patents/US-11469267","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469267","json":"https://patentable.app/api/llm-context/US-11469267","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T01:31:36.677Z"}