{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469303","patent":{"patent_number":"US-11469303","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-11-30T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":6,"abstract":"A semiconductor device includes a semiconductor device provided on a semiconductor substrate and an ohmic electrode provided on a back surface of the semiconductor device and containing a nickel silicide and a molybdenum carbide, or the nickel silicide and a titanium carbide. The ohmic electrode is configured by first regions where a silicide is thick and second regions where the silicide is thin; a ratio of an arithmetic area of the second regions to an arithmetic area of the ohmic electrode is in a range from 10% to 30% in a plan view."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A semiconductor device includes a semiconductor device provided on a semiconductor substrate and an ohmic electrode provided on a back surface of the semiconductor device and containing a nickel silic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469303","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469303","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11469303). https://patentable.app/patents/US-11469303","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469303","json":"https://patentable.app/api/llm-context/US-11469303","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T11:55:54.061Z"}