{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469304","patent":{"patent_number":"US-11469304","title":"Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-09-08T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"According to one embodiment, a semiconductor device includes a first semiconductor layer including Alx1Ga1-x1N (0≤x1<1), a second semiconductor layer including Alx2In1-x2N (0<x2<1 and x1<x2), and an intermediate region provided between the first and second semiconductor layers. The intermediate region includes Alx3Ga1-x3N (0<x3≤1 and x2<x3). The second semiconductor layer includes first and second surfaces. The second surface is between the intermediate region and the first surface in a first direction. The first direction is from the first semiconductor layer toward the second semiconductor layer. The second semiconductor layer includes a plurality of first pits provided in the first surface. Widths of the first pits are 200 nm or more. A density in the first surface of the first pits is not less than 5×107/cm2 and not more than 1×108/cm2."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device","description":"According to one embodiment, a semiconductor device includes a first semiconductor layer including Alx1Ga1-x1N (0≤x1<1), a second semiconductor layer including Alx2In1-x2N (0<x2<1 and x1<x2), and an i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469304","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469304","citation_suggestion":"Patentable. \"Semiconductor device, method for manufacturing semiconductor device, and manufacturing apparatus of semiconductor device\" (US-11469304). https://patentable.app/patents/US-11469304","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469304","json":"https://patentable.app/api/llm-context/US-11469304","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:12:37.500Z"}