{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469307","patent":{"patent_number":"US-11469307","title":"Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device","assignee":null,"inventors":[],"filing_date":"2020-11-16T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on opposite sides of the well region. A gate electrode is arranged over the well region, has a bottom surface arranged below a topmost surface of the substrate, and extends between the source and drain regions. A trench isolation structure surrounds the source region, the drain region, and the gate electrode. A gate dielectric structure separates the gate electrode from the well region, the source, region, the drain region, and the trench isolation structure. The gate electrode structure has a central portion and a corner portion. The central portion has a first thickness, and the corner portion has a second thickness that is greater than the first thickness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device","description":"In some embodiments, the present disclosure relates to a semiconductor device that includes a well region with a substrate. A source region and a drain region are arranged within the substrate on oppo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469307","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469307","citation_suggestion":"Patentable. \"Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV device\" (US-11469307). https://patentable.app/patents/US-11469307","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469307","json":"https://patentable.app/api/llm-context/US-11469307","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T11:51:58.098Z"}