{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469311","patent":{"patent_number":"US-11469311","title":"Method for forming semiconductor device with air gap between two conductive features","assignee":null,"inventors":[],"filing_date":"2021-02-25T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"The present disclosure provides a method for forming a semiconductor device with an air gap for reducing the parasitic capacitance between two conductive features. The method includes forming a first source/drain region and a second source/drain region in a semiconductor substrate, and forming a first conductive feature over and electrically connected to the first source/drain region. The method also includes forming a first spacer structure on a sidewall of the first conductive feature, and forming a second conductive feature over and electrically connected to the second source/drain region. The second conductive feature is adjacent to the first spacer structure, and the first spacer structure is etched during the forming the second conductive feature. The method further includes forming a second spacer structure over the etched first spacer structure, and performing a heat treatment process to transform a portion of the first spacer structure into an air gap."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming semiconductor device with air gap between two conductive features","description":"The present disclosure provides a method for forming a semiconductor device with an air gap for reducing the parasitic capacitance between two conductive features. The method includes forming a first ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469311","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469311","citation_suggestion":"Patentable. \"Method for forming semiconductor device with air gap between two conductive features\" (US-11469311). https://patentable.app/patents/US-11469311","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469311","json":"https://patentable.app/api/llm-context/US-11469311","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:34.264Z"}