{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11469312","patent":{"patent_number":"US-11469312","title":"Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices","assignee":null,"inventors":[],"filing_date":"2020-04-06T00:00:00.000Z","publication_date":"2022-10-11T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A semiconductor device structure comprises a region of semiconductor material comprising a first conductivity type, a first major surface, and a second major surface opposite to the first major surface. A first trench gate structure includes a first trench extending from the first major surface into the region of semiconductor material, a first dielectric structure is over sidewall surfaces and a portion of a lower surface of the first trench, wherein the first dielectric structure comprises a first opening adjacent to the lower surface of the first trench, a first recessed contact extends through the first opening, and a first contact region is over the first recessed contact within the first trench, wherein the first recessed contact and the first contact region comprise different materials. A first doped region comprising a second dopant conductivity type opposite to the first conductivity type is in the region of semiconductor material and is spaced apart from the first major surface and below the first trench. A gate contact region is in the region of semiconductor material and is electrically connected to the first doped region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices","description":"A semiconductor device structure comprises a region of semiconductor material comprising a first conductivity type, a first major surface, and a second major surface opposite to the first major surfac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11469312","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11469312","citation_suggestion":"Patentable. \"Remote contacts for a trench semiconductor device and methods of manufacturing semiconductor devices\" (US-11469312). https://patentable.app/patents/US-11469312","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11469312","json":"https://patentable.app/api/llm-context/US-11469312","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:45:17.456Z"}