{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11472984","patent":{"patent_number":"US-11472984","title":"Method of enhancing the removal rate of polysilicon","assignee":null,"inventors":[],"filing_date":"2021-09-27T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":8,"abstract":"A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline solution containing water, an abrasive, a low alkyl amine compound; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the mixture of the chemical mechanical polishing slurry and the alkaline solution onto the polishing surface at or near the interface between the polishing pad and the substrate, wherein some of the polysilicon is polished away from the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of enhancing the removal rate of polysilicon","description":"A method of enhancing the removal rate of polysilicon from a substrate includes mixing an acid chemical mechanical polishing slurry containing water, an organic acid and an abrasive with an alkaline s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11472984","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11472984","citation_suggestion":"Patentable. \"Method of enhancing the removal rate of polysilicon\" (US-11472984). https://patentable.app/patents/US-11472984","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11472984","json":"https://patentable.app/api/llm-context/US-11472984","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T04:01:21.053Z"}