{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11474012","patent":{"patent_number":"US-11474012","title":"Method for preparing silicon carbide wafer and silicon carbide wafer","assignee":null,"inventors":[],"filing_date":"2020-06-29T00:00:00.000Z","publication_date":"2022-10-18T00:00:00.000Z","cpc_codes":["G01N","G01N","G01N","G01N"],"num_claims":20,"abstract":"A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for preparing silicon carbide wafer and silicon carbide wafer","description":"A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temper","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11474012","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11474012","citation_suggestion":"Patentable. \"Method for preparing silicon carbide wafer and silicon carbide wafer\" (US-11474012). https://patentable.app/patents/US-11474012","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11474012","json":"https://patentable.app/api/llm-context/US-11474012","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:05:27.018Z"}